Memory and Synaptic Devices Based on Emerging 2D Ferroelectricity
نویسندگان
چکیده
Memory devices are an essential part of modern electronics. Efforts to move beyond the traditional “read” and “write” digital information in volatile non-volatile memory leading rapid growth neuromorphic technology. There is a growing demand for with continuous states various retention times greater integration density more energy-efficient mechanisms. Two types (i.e., neuro-synaptic devices) have been extensively investigated emerging materials. Among numerous materials such devices, this review, authors focus on 2D ferroelectric promising synaptic devices. Three based classified discussed here: 1) gating semiconducting channels, 2) active 3) tunnel junction It known that atomically thin geometry competes ferroelectricity, which can degrade quality Various efforts resolve fundamental issue how they be used as critical element surveyed.
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ژورنال
عنوان ژورنال: Advanced electronic materials
سال: 2023
ISSN: ['2199-160X']
DOI: https://doi.org/10.1002/aelm.202300211